40-GHz transimpedance amplifier with differential outputs using InP-InGaAs heterojunction bipolar transistors

• Published in: IEEE journal of solid-state circuits Vol. 38; no. 9; pp. 1518 - 1523
• Main Authors: Wu, C.Q., Sovero, E.A., Massey, B.
• Format: Journal Article
• Language: English
• Published: New York IEEE 01.09.2003; The Institute of Electrical and Electronics Engineers, Inc. (IEEE)
• Subjects: Amplifiers; Bandwidth; Circuits; Differential amplifiers; Fiber optics; Heterojunction bipolar transistors; Indium phosphide; Optical amplifiers; Optical fiber communication; Optical fibers; Optical receivers; Photodetectors; Semiconductor devices; Semiconductors; Silicon germanium; Space shuttles
• ISSN: 0018-9200; 1558-173X
• DOI: 10.1109/JSSC.2003.815927

High-gain and high-bandwidth transimpedance amplifiers (TIAs) are required for fiber-optic receiver modules. This paper reports on the design, fabrication, and characterization of a 40-Gb/s TIA for SONET/SDH STS-768/STM-256 applications based on an InP-InGaAs single heterojunction bipolar transistor (SHBT) process developed at Vitesse Semiconductor Corporation (Vitesse Indium Phosphide Release 1 or VIP-1). This amplifier consists of a single-ended input transimpedance pre-amplifier and a differential output post-amplifier. The measured differential transimpedance is 1800 /spl Omega/ with -3-dB bandwidth greater than 40 GHz. The high gain of this circuit eliminates the need for a standalone limiting amplifier between the conventional transimpedance pre-amplifier and the demultiplexer in short-reach applications.