Improvement of soft magnetic properties of CoFeSiB thin film by external magnetic field and Zr addition

Co 40 Fe 17 Si 32 B 11 thin film (150 nm) was deposited by using an RF magnetron co-sputtering system on a Si (100) substrate. A self-designed substrate holder, including various hard magnets arranged around the substrates, was utilized so that various external magnetic fields could be applied to th...

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Published inMetals and materials international Vol. 18; no. 3; pp. 527 - 530
Main Authors Kim, SungMan, Lee, Seung Ju, Lee, JungJoong, Jeung, Won Young
Format Journal Article
LanguageEnglish
Published Springer The Korean Institute of Metals and Materials 01.06.2012
Springer Nature B.V
대한금속·재료학회
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Summary:Co 40 Fe 17 Si 32 B 11 thin film (150 nm) was deposited by using an RF magnetron co-sputtering system on a Si (100) substrate. A self-designed substrate holder, including various hard magnets arranged around the substrates, was utilized so that various external magnetic fields could be applied to the Si substrates during the film deposition. By the effect of this deposition field, the applied field during the sample deposition, the squareness of the CoFeSiB thin film was significantly enhanced. From the angular analysis of the magnetic hysteresis curves from easy (parallel to external magnetic field) to hard (perpendicular to external magnetic field) direction of magnetization, it can be deduced that Co and Fe atoms were magnetically arranged to the easy magnetization axis by an external magnetic field which was induced during deposition. Also, the compositional cluster size of the CoFeSiB thin film was remarkably reduced by Zr addition, causing a decrease in the value of coercivity. These results suggest that apparent magnetic anisotropy was achieved, and the soft magnetic property of the CoFeSiB thin film was remarkably enhanced by the combination of the deposition field and Zr addition.
Bibliography:ObjectType-Article-2
SourceType-Scholarly Journals-1
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content type line 23
G704-000797.2012.18.3.010
ISSN:1598-9623
2005-4149
DOI:10.1007/s12540-012-3023-1