Thermal processing induced plastic deformation in GaAs wafers

• Published in: Materials science & engineering. B, Solid-state materials for advanced technology Vol. 80; no. 1; pp. 91 - 94
• Main Authors: Möck, P., Laczik, Z.J., Booker, G.R.
• Format: Journal Article Conference Proceeding
• Language: English
• Published: Amsterdam Elsevier B.V 22.03.2001; Elsevier
• Subjects: Condensed matter: structure, mechanical and thermal properties; Deformation and plasticity (including yield, ductility, and superplasticity); Exact sciences and technology; GaAs; Infrared polariscopy; Mechanical and acoustical properties of condensed matter; Mechanical properties of solids; Physics; Plastic deformation; X-ray topography; Infrared polariscopy; Plastic deformation; GaAs; X-ray topography; Light interferometry; Gallium arsenides; Inorganic compounds; Semiconductor materials; Slip line; Binary compounds; Experimental study; Heat treatments; Dislocations; Plasticity; Visible radiation; Shear stress; Heterostructures
• ISSN: 0921-5107; 1873-4944
• DOI: 10.1016/S0921-5107(00)00620-6

Different types of dislocation bundles were identified in the (001) GaAs substrates of III–V heterostructures. Comparisons of scanning infrared polariscopy images and X-ray transmission topograms showed a one to one correlation of stripes of reduced residual shear strain and dislocation bundles of the majority type. Visible-light interferometry and Makyoh topography, on the other hand, showed a slip-line distribution that is in correspondence to the distribution of dislocation bundles of the minority type(s). A new model for the plastic deformation of circular GaAs wafers during thermal processing is briefly outlined and its good agreement with the main experimental results demonstrated.