High-Temperature Leakage Improvement in Metal-Insulator-Metal Capacitors by Work-Function Tuning

• Published in: IEEE electron device letters Vol. 28; no. 3; pp. 235 - 237
• Main Authors: Chiang, K.C., Cheng, C.H., Pan, H.C., Hsiao, C.N., Chou, C.P., Chin, A., Hwang, H.L.
• Format: Journal Article
• Language: English
• Published: New York, NY IEEE 01.03.2007; Institute of Electrical and Electronics Engineers; The Institute of Electrical and Electronics Engineers, Inc. (IEEE)
• Subjects: Applied sciences; Capacitance; Capacitor; Capacitors; Compound structure devices; Devices; Dielectric, amorphous and glass solid devices; Dielectrics; Electrodes; Electronics; Exact sciences and technology; high temperature; Laminates; Leakage; Leakage current; metal-insulator-metal (MIM); MIM capacitors; Plasma temperature; Radio frequency; Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices; thermal leakage; Tuning; Very large scale integration; Voltage; MIM devices; MIM structure; Stratified material; high temperature; metal-insulator- metal (MIM); Temperature coefficient; Work function; Capacitance; Leakage current; High k dielectric; Ni; thermal leakage; Capacitor; Cost lowering
• ISSN: 0741-3106; 1558-0563
• DOI: 10.1109/LED.2007.891265

Using low-cost and high work-function Ni, a low leakage current of 5times10 -6 A/cm 2 at 125 degC is obtained in a high 25-fF/mum 2 -density SrTiO 3 metal-insulator-metal (MIM) capacitor processed at 400 degC. This is approximately two orders of magnitude better than the same device using a TaN electrode, with added advantages of improved voltage and temperature coefficients of capacitance. This work-function tuning method also has merit for achieving both low thermal leakage and high overall kappa value beyond previous laminate structure