Three-Dimensional Graphene Nano-Networks with High Quality and Mass Production Capability via Precursor-Assisted Chemical Vapor Deposition

• Published in: Scientific reports Vol. 3; no. 1; p. 1788
• Main Authors: Yoon, Jong-Chul, Lee, Jung-Soo, Kim, Sun-I, Kim, Kwang-Hyun, Jang, Ji-Hyun
• Format: Journal Article
• Language: English
• Published: London Nature Publishing Group UK 07.05.2013; Nature Publishing Group
• Subjects: 639/301/299/1013; 639/925/357/918/1055; 639/925/918/1052; 639/925/927/1058; Capacitance; Chemical vapor deposition; Conductivity; Electrochemistry; Electronic equipment; Humanities and Social Sciences; Iron; multidisciplinary; Quartz; Science; Surface area; Vapors
• ISSN: 2045-2322; 2045-2322
• DOI: 10.1038/srep01788

We report a novel approach to synthesize chemical vapor deposition-grown three-dimensional graphene nano-networks (3D-GNs) that can be mass produced with large-area coverage. Annealing of a PVA/iron precursor under a hydrogen environment, infiltrated into 3D-assembled-colloidal silicas reduces iron ions and generates few-layer graphene by precipitation of carbon on the iron surface. The 3D-GN can be grown on any electronic device-compatible substrate, such as Al 2 O 3 , Si, GaN, or Quartz. The conductivity and surface area of a 3D-GN are 52 S/cm and 1,025 m 2 /g, respectively, which are much better than the previously reported values. Furthermore, electrochemical double-layer capacitors based on the 3D-GN have superior supercapacitor performance with a specific capacitance of 245 F/g and 96.5% retention after 6,000 cycles due to the outstanding conductivity and large surface area. The excellent performance of the 3D-GN as an electrode for supercapacitors suggests the great potential of interconnected graphene networks in nano-electronic devices and energy-related materials.