InGaN/GaN tunnel-injection blue light-emitting diodes

• Published in: IEEE transactions on electron devices Vol. 49; no. 6; pp. 1093 - 1095
• Main Authors: Wen, T.C., Chang, S.J., Wu, L.W., Su, Y.K., Lai, W.C., Kuo, C.H., Chen, C.H., Sheu, J.K., Chen, J.F.
• Format: Journal Article
• Language: English
• Published: New York IEEE 01.06.2002; The Institute of Electrical and Electronics Engineers, Inc. (IEEE)
• Subjects: Asymmetry; Carts; Electric potential; Emitters (electron); Gallium compounds; Gallium nitrides; Indium compounds; Indium gallium nitrides; Light-emitting diodes; Photoluminescence; Resonant tunneling devices; Voltage
• ISSN: 0018-9383; 1557-9646
• DOI: 10.1109/TED.2002.1003762

A charge asymmetric resonance tunneling (CART) structure was applied to nitride-based blue light emitting diodes (LEDs) to enhance their output efficiency. It was found that with a 20-nm-thick In/sub 0.18/Ga/sub 0.82/N electron emitter layer, we could increase the LED output intensity from 28.3 mini...