InGaN/GaN tunnel-injection blue light-emitting diodes

A charge asymmetric resonance tunneling (CART) structure was applied to nitride-based blue light emitting diodes (LEDs) to enhance their output efficiency. It was found that with a 20-nm-thick In/sub 0.18/Ga/sub 0.82/N electron emitter layer, we could increase the LED output intensity from 28.3 mini...

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Published inIEEE transactions on electron devices Vol. 49; no. 6; pp. 1093 - 1095
Main Authors Wen, T.C., Chang, S.J., Wu, L.W., Su, Y.K., Lai, W.C., Kuo, C.H., Chen, C.H., Sheu, J.K., Chen, J.F.
Format Journal Article
LanguageEnglish
Published New York IEEE 01.06.2002
The Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subjects
Asymmetry
Carts
Electric potential
Emitters (electron)
Gallium compounds
Gallium nitrides
Indium compounds
Indium gallium nitrides
Light-emitting diodes
Photoluminescence
Resonant tunneling devices
Voltage
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Summary:A charge asymmetric resonance tunneling (CART) structure was applied to nitride-based blue light emitting diodes (LEDs) to enhance their output efficiency. It was found that with a 20-nm-thick In/sub 0.18/Ga/sub 0.82/N electron emitter layer, we could increase the LED output intensity from 28.3 minicandela (mcd) to 43.2 mcd (i.e., a 53% increase). However, a further increase in electron emitter layer thickness will reduce the intensity due to relaxation. It was also found that we could decrease the 20 mA forward voltage from 4.16 V to 3.58 V with a proper electron emitter layer.
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ISSN:0018-9383
1557-9646
DOI:10.1109/TED.2002.1003762