Field-effect transistors made from solution-grown two-dimensional tellurene

• Published in: Nature electronics Vol. 1; no. 4; pp. 228 - 236
• Main Authors: Wang, Yixiu, Qiu, Gang, Wang, Ruoxing, Huang, Shouyuan, Wang, Qingxiao, Liu, Yuanyue, Du, Yuchen, Goddard, William A, Kim, Moon J, Xu, Xianfan, Ye, Peide D, Wu, Wenzhuo
• Format: Journal Article
• Language: English
• Published: London Nature Publishing Group 01.04.2018
• Subjects: Crystals; Current density; Electrons; Field effect transistors; Layered materials; Morphology; Point defects; Room temperature; Semiconductor devices; Substrates; Tellurium; Thickness; Transmission electron microscopy; Two dimensional materials; Vibration mode

The reliable production of two-dimensional (2D) crystals is essential for the development of new technologies based on 2D materials. However, current synthesis methods suffer from a variety of drawbacks, including limitations in crystal size and stability. Here, we report the fabrication of large-ar...