A novel bipolar-MOSFET low-noise amplifier (BiFET LNA), circuit configuration, design methodology, and chip implementation

This paper proposes a new RF circuit configuration: the Bipolar cascoded with a mosFET (BiFET). Applying the BiFET for low-noise amplifiers (LNAs), we have developed a new BiFET-based design methodology. By using this methodology, a BiFET LNA has been designed based on Jazz Semiconductor Inc.'s...

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Bibliographic Details
Published inIEEE transactions on microwave theory and techniques Vol. 51; no. 11; pp. 2175 - 2180
Main Authors Pingxi Ma, Racanelli, M., Jie Zheng, Knight, M.
Format Journal Article
LanguageEnglish
Published New York IEEE 01.11.2003
The Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subjects
Amplifiers
BiCMOS integrated circuits
Circuits
Design engineering
Design methodology
Energy consumption
Jazz
Linearity
Low-noise amplifiers
Methodology
Microwaves
MOSFET circuits
MOSFETs
Noise figure
Radio frequency
Semiconductor device noise
Semiconductors
Voltage
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Summary:This paper proposes a new RF circuit configuration: the Bipolar cascoded with a mosFET (BiFET). Applying the BiFET for low-noise amplifiers (LNAs), we have developed a new BiFET-based design methodology. By using this methodology, a BiFET LNA has been designed based on Jazz Semiconductor Inc.'s SiGe90 BiCMOS process. The packaged chip tested on board has demonstrated a 16-dB power-gain 1.6-dB noise-figure -6.5-dBm input third intercept point while consuming only 3 mW (2.2 V /spl times/ 1.4 mA) in the personal communication system (PCS) band. To our knowledge, this is the lowest current silicon-based LNA reported to date that maintains good PCS band performance.
Bibliography:ObjectType-Article-2
SourceType-Scholarly Journals-1
ObjectType-Feature-1
content type line 23
ISSN:0018-9480
1557-9670
DOI:10.1109/TMTT.2003.818581