Comparing Si and SiC diode performance in commercial AC-to-DC rectifiers with power-factor correction

Improvements in power electronics are basically the result of research in two main fields, namely: 1) new topologies and 2) new devices. Researchers' efforts to achieve improved topologies are necessarily limited by the characteristics of the devices. As a result, both topologies and devices mu...

Full description

Saved in:
Bibliographic Details
Published inIEEE transactions on industrial electronics (1982) Vol. 53; no. 2; pp. 705 - 707
Main Authors Hernando, M.M., Fernandez, A., Garcia, J., Lamar, D.G., Rascon, M.
Format Journal Article
LanguageEnglish
Published New York IEEE 01.04.2006
The Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subjects
Capacitors
Circuit topology
Converters
DC-DC power converters
Devices
Diodes
Electronics
EN 61000-3-2 regulations
Industrial electronics
Power electronics
power-factor correction
Rectifiers
Schottky diodes
Silicon
Silicon carbide
silicon carbide devices
Temperature
Thermal conductivity
Topology
Voltage
Online AccessGet full text

Cover

More Information
Summary:Improvements in power electronics are basically the result of research in two main fields, namely: 1) new topologies and 2) new devices. Researchers' efforts to achieve improved topologies are necessarily limited by the characteristics of the devices. As a result, both topologies and devices must move forward jointly and at same time. This letter studies the impact of silicon carbide diodes on a classic structure of power-factor correction-the boost converter.
Bibliography:ObjectType-Article-2
SourceType-Scholarly Journals-1
ObjectType-Feature-1
content type line 23
ISSN:0278-0046
1557-9948
DOI:10.1109/TIE.2006.870882