Electron spin resonance of interacting spins in n-Ge: II. Change in the width and shape of lines

• Published in: Semiconductors (Woodbury, N.Y.) Vol. 42; no. 11; pp. 1274 - 1281
• Main Authors: Veinger, A. I., Zabrodskii, A. G., Tisnek, T. V., Goloshchapov, S. I.
• Format: Journal Article
• Language: English
• Published: Dordrecht SP MAIK Nauka/Interperiodica 01.11.2008
• Subjects: ASYMMETRY; DIFFUSION; ELECTRON SPIN RESONANCE; Electronic and Optical Properties of Semiconductors; EXCHANGE INTERACTIONS; FLUCTUATIONS; GERMANIUM; LANDE FACTOR; LAYERS; LINE BROADENING; Magnetic Materials; Magnetism; MATERIALS SCIENCE; Physics; Physics and Astronomy; RELAXATION; RELAXATION TIME; SHAPE; SPIN; STRESSES; 76.30.Da; 71.20.Mg; 71.30.th
• ISSN: 1063-7826; 1090-6479
• DOI: 10.1134/S1063782608110055

The effect of spin interaction on the width and shape of the electron spin resonance line in compensated and uncompensated n -Ge:As has been studied. It is shown that, in the case of a magnetic field oriented along the [100] axis, the width of the resonance line decreases irrespective of the degree of compensation as the critical concentration of the insulator-metal transition is approached, owing to enhancement of the exchange interaction of spins and to an increase in the spin relaxation time. When the magnetic field is directed along other axes, an additional line broadening appears in compensated samples. This broadening is determined by the influence exerted on the g factor by fluctuations of the internal electrostatic field via the stresses generated by these fluctuations. For well-conducting samples, in which the thickness of the skin layer becomes smaller than that of the sample, the line takes on an asymmetric (Dysonian) shape. In this case, the ratio between the wings of the derivative, characteristic of this line shape, is determined by the ratio between the rates of spin diffusion and spin relaxation.