Degradation Modes of InGaAs p-n Diodes Operated at Forward Biases

• Published in: Japanese Journal of Applied Physics Vol. 37; no. 10R; p. 5510
• Main Authors: Wada, Yoshinori, Enoki, Takatomo
• Format: Journal Article
• Language: English
• Published: 1998
• ISSN: 0021-4922; 1347-4065
• DOI: 10.1143/JJAP.37.5510

Degradation modes under level-shift circuit operations of InP-based lattice-matched InGaAs p-n diodes for InP-based ICs are studied. We conducted life tests under forward-biased conditions, reverse-biased conditions, and elevated temperature conditions to examine changes in electrical characteristics unique to the stresses in level-shift circuit application. The operating current of the diodes deceases with forward-bias aging, which is a serious mode for practical diodes used in level-shift circuits. This operating current decrease becomes remarkable with the current increase that is observed in the low-voltage forward-bias region of the current–voltage ( I – V ) characteristics. This current increase at low voltage suddenly appears after a considerable aging time. The I – V characteristics were monitored during the tests, and the changes were analyzed in detail to elucidate the mutual interaction among the modes found in the tests. The degradation modes are discussed in relation to reported failure modes for heterostructure devices having p-n junctions.