Effect of Sn crystallographic orientation on solder electromigration and Ni diffusion in Cu/Ni plating/Sn–0.7Cu joint at low current density
Electromigration (EM) in solder joints has recently been recognized as a serious reliability issue in the field of car electronics. EM in power modules is also of concern for next-generation environmentally-friendly vehicles. The current density of 10 kA/cm 2 is well-known as the threshold for EM fa...
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Published in | Journal of materials science. Materials in electronics Vol. 28; no. 17; pp. 12630 - 12639 |
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Main Authors | , , , , , , |
Format | Journal Article |
Language | English |
Published |
New York
Springer US
01.09.2017
Springer Nature B.V |
Subjects | |
Online Access | Get full text |
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Summary: | Electromigration (EM) in solder joints has recently been recognized as a serious reliability issue in the field of car electronics. EM in power modules is also of concern for next-generation environmentally-friendly vehicles. The current density of 10 kA/cm
2
is well-known as the threshold for EM failure. Few researches have studied the EM behavior of solders at realistic current densities lower than 10 kA/cm
2
. In the present study, EM in a Cu/Ni plating/Sn–0.7Cu joint was investigated at low current densities of 2.5 and 5.0 kA/cm². It was found that even at a low current density of 2.5 kA/cm
2
, severe EM damage can be induced depending on Sn crystallographic orientation. When the
c
-axis of Sn crystals was parallel to the direction of electron flow, the solder detached at the cathode of the joint operated at 2.5 kA/cm
2
for 2520 h. Conversely, when the
c
-axis of Sn crystals was perpendicular to the direction of electron flow, the solder did not detach in the joint until after a much longer time of 8200 h. Thus, it was clarified that the EM lifetime in a Cu/Ni plating/Sn–0.7Cu joint when the
c
-axis of Sn crystals was parallel to the direction of electron flow at a low current density of 2.5 kA/cm
2
was about one-third that of the perpendicular orientation. |
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ISSN: | 0957-4522 1573-482X |
DOI: | 10.1007/s10854-017-7087-z |