Spin property improvement of boron vacancy defect in hexagonal boron nitride by thermal treatment

Abstract Negatively charged boron vacancy ( V B – ) in hexagonal boron nitride has attracted attention as a promising spin defect for quantum sensing applications. Hence, a fabrication method for generation of V B – with superior spin properties would be desirable. In this study, we demonstrated V B...

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Bibliographic Details
Published inApplied physics express Vol. 16; no. 3; pp. 32006 - 32009
Main Authors Suzuki, Tetta, Yamazaki, Yuichi, Taniguchi, Takashi, Watanabe, Kenji, Nishiya, Yusuke, Matsushita, Yu-ichiro, Harii, Kazuya, Masuyama, Yuta, Hijikata, Yasuto, Ohshima, Takeshi
Format Journal Article
LanguageEnglish
Published IOP Publishing 01.03.2023
Subjects
annealing
boron vacancy
hBN
high temperature irradiation
ODMR
quantum sensor
spin defect
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Summary:Abstract Negatively charged boron vacancy ( V B – ) in hexagonal boron nitride has attracted attention as a promising spin defect for quantum sensing applications. Hence, a fabrication method for generation of V B – with superior spin properties would be desirable. In this study, we demonstrated V B – formation by two thermal treatment methods. Both methods improve the signal-to-noise ratio of optically detected magnetic resonance signal by a factor of 4. Furthermore, a zero-field splitting parameter E which reflects crystal distortion after irradiation significantly reduces for irradiation above 650 °C. These findings indicate that thermal treatment is an effective method for a V B – based quantum sensor.
Bibliography:APEX-107178
ISSN:1882-0778
1882-0786
DOI:10.35848/1882-0786/acc442