Linear and symmetric conductance response of magnetic domain wall type spin-memristor for analog neuromorphic computing

We developed a three-terminal spintronic memristor named spin-memristor for the artificial synapse of neuromorphic devices. Current-induced domain wall (DW) motion type magnetoresistance was used to generate variable analog conductance changes. Magnetic tunnel junction with a perpendicularly magneti...

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Bibliographic Details
Published inApplied physics express Vol. 13; no. 4; pp. 43004 - 43007
Main Authors Shibata, Tatsuo, Shinohara, Tetsuhito, Ashida, Takuya, Ohta, Minoru, Ito, Kuniyasu, Yamada, Shogo, Terasaki, Yukio, Sasaki, Tomoyuki
Format Journal Article
LanguageEnglish
Published IOP Publishing 01.04.2020
Subjects
Domain wall
Magnetic tunneling junction
Neuromorphic
Spintronics
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Summary:We developed a three-terminal spintronic memristor named spin-memristor for the artificial synapse of neuromorphic devices. Current-induced domain wall (DW) motion type magnetoresistance was used to generate variable analog conductance changes. Magnetic tunnel junction with a perpendicularly magnetized DW layer was fabricated on a silicon substrate. Due to the forward and backward DW motions, a linear and symmetric conductance response was achieved. The impact of memristive behavior on neural networks was evaluated using numerical simulation of hand-written digit recognition. This spin-memristor is identified as one of the promising candidates for artificial synapses in analog neuromorphic devices.
Bibliography:APEX-103582
ISSN:1882-0778
1882-0786
DOI:10.35848/1882-0786/ab7e07