In situ wafer curvature measurement and strain control of AlInN/GaN distributed Bragg reflectors

We measured in situ wafer curvature evolutions of 25-pair AlInN/GaN DBRs on sapphire substrates and found that strains in the DBRs were gradually increased in a compressive direction as the epitaxial growth progressed. The increase of the strain was originated in the AlInN layers of the DBRs, sugges...

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Bibliographic Details
Published inApplied physics express Vol. 13; no. 5; pp. 55506 - 55510
Main Authors Hiraiwa, Kei, Muranaga, Wataru, Iwayama, Sho, Takeuchi, Tetsuya, Kamiyama, Satoshi, Iwaya, Motoaki, Akasaki, Isamu
Format Journal Article
LanguageEnglish
Published IOP Publishing 01.05.2020
Subjects
AlInN/GaN DBR
In situ measurement
InN mole fraction
MOVPE
Wafer curvature
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Summary:We measured in situ wafer curvature evolutions of 25-pair AlInN/GaN DBRs on sapphire substrates and found that strains in the DBRs were gradually increased in a compressive direction as the epitaxial growth progressed. The increase of the strain was originated in the AlInN layers of the DBRs, suggesting a possibility that the InN mole fraction was increased with 0.03%-0.05%/pair. In order to compensate the increase of the strain in the AlInN layers, we grew the DBR by gradually increasing AlInN growth temperatures with 1°C/5 pairs, resulting in narrower satellite peaks of an X-ray diffraction pattern.
Bibliography:APEX-103736.R1
ISSN:1882-0778
1882-0786
DOI:10.35848/1882-0786/ab88c6