In situ wafer curvature measurement and strain control of AlInN/GaN distributed Bragg reflectors
We measured in situ wafer curvature evolutions of 25-pair AlInN/GaN DBRs on sapphire substrates and found that strains in the DBRs were gradually increased in a compressive direction as the epitaxial growth progressed. The increase of the strain was originated in the AlInN layers of the DBRs, sugges...
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Published in | Applied physics express Vol. 13; no. 5; pp. 55506 - 55510 |
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Main Authors | , , , , , , |
Format | Journal Article |
Language | English |
Published |
IOP Publishing
01.05.2020
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Subjects | |
Online Access | Get full text |
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Summary: | We measured in situ wafer curvature evolutions of 25-pair AlInN/GaN DBRs on sapphire substrates and found that strains in the DBRs were gradually increased in a compressive direction as the epitaxial growth progressed. The increase of the strain was originated in the AlInN layers of the DBRs, suggesting a possibility that the InN mole fraction was increased with 0.03%-0.05%/pair. In order to compensate the increase of the strain in the AlInN layers, we grew the DBR by gradually increasing AlInN growth temperatures with 1°C/5 pairs, resulting in narrower satellite peaks of an X-ray diffraction pattern. |
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Bibliography: | APEX-103736.R1 |
ISSN: | 1882-0778 1882-0786 |
DOI: | 10.35848/1882-0786/ab88c6 |