Efficient passivation of DY center in CH3NH3PbBr3 by chlorine: Quantum molecular dynamics

MAPbBr 3 (MA = CH 3 NH 3 + ) doping with bismuth increases electric conductivity, charge carrier density and photostability, reduces toxicity, and expands light absorption. However, Bi doping shortens excited-state lifetimes due to formation of DY − charge recombination centers. Using nonadiabatic m...

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Published inNano research Vol. 15; no. 3; pp. 2112 - 2122
Main Authors Shi, Ran, Fang, Wei-Hai, Vasenko, Andrey S., Long, Run, Prezhdo, Oleg V.
Format Journal Article
LanguageEnglish
Published Beijing Tsinghua University Press 01.03.2022
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Summary:MAPbBr 3 (MA = CH 3 NH 3 + ) doping with bismuth increases electric conductivity, charge carrier density and photostability, reduces toxicity, and expands light absorption. However, Bi doping shortens excited-state lifetimes due to formation of DY − charge recombination centers. Using nonadiabatic molecular dynamics and time-domain density functional theory, we demonstrate that the DY − center forms a deep, highly localized hole trap, which accelerates nonradiative relaxation ten-fold and is responsible for 90% of carrier losses. Hole trapping occurs by coupling between the valence band and the trap state, facilitated by the Br atoms surrounding the Bi dopant. Passivation of the DY − center with chlorines heals the local geometry distortion, eliminates the trap state, and makes the carrier lifetimes longer than even in pristine MAPbBr 3 . The decreased charge recombination arises from reduced nonadiabatic coupling and shortened coherence time, due to diminished electron-hole overlap around the passivated defect. Our study demonstrates accelerated nonradiative recombination in Bi-doped MAPbBr 3 , suggests a strategy for defect passivation and reduction of nonradiative energy losses, and provides atomistic insights into unusual defect properties of metal halide perovskites needed for rational design of high-performance perovskite solar cells and optoelectronic devices.
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ISSN:1998-0124
1998-0000
DOI:10.1007/s12274-021-3840-y