Resistive switching properties of sol-gel derived Mo-doped SrZrO3 thin films

• Published in: Surface & coatings technology Vol. 202; no. 4-7; pp. 1319 - 1322
• Main Authors: LIN, Chih-Yang, LIN, Chun-Chieh, HUANG, Chun-Hsing, LIN, Chen-Hsi, TSENG, Tseung-Yuen
• Format: Conference Proceeding Journal Article
• Language: English
• Published: Lausanne Elsevier 15.12.2007
• Subjects: Applied sciences; Cross-disciplinary physics: materials science; rheology; Exact sciences and technology; Materials science; Metals. Metallurgy; Methods of deposition of films and coatings; film growth and epitaxy; Physics; Production techniques; Surface treatment; Surface treatments; Thin films; Nonvolatile memory; Sol-gel; Doping; Resistive switching; SrZrO3; Surface treatments; Sol-gel process; Switching
• ISSN: 0257-8972; 1879-3347
• DOI: 10.1016/j.surfcoat.2007.07.052

Hysteretic I-V characteristics of the SrZrO3 (SZO) thin films with various Mo-doping concentrations were investigated in the study. The 0.2mol% Mo-doping SZO-based memory device showed excellent resistive switching characteristics, and the resistive switching can be operated over 300 times during successive operation. Both high and low conductive states were stable over 104s. Multi-bit behavior was investigated by dc voltage sweeping with different spans of voltage scan for OFF-process and by various OFF-pulse voltages as well. The endurance test can be over 1000 times with no data loss found. The experimental results showed high potential for nonvolatile memory application.