Electronic properties of boron- and nitrogen-doped graphene: a first principles study

• Published in: Journal of nanoparticle research : an interdisciplinary forum for nanoscale science and technology Vol. 14; no. 8; pp. 1 - 5
• Main Authors: Mukherjee, Sugata, Kaloni, T. P.
• Format: Journal Article
• Language: English
• Published: Dordrecht Springer Netherlands 01.08.2012; Springer Nature B.V
• Subjects: Band structure of solids; Characterization and Evaluation of Materials; Chemistry and Materials Science; Doping; Energy gap; Fermi level; Fermi surfaces; Graphene; health and environment; Inorganic Chemistry; Lasers; Materials Science; Nanomaterials in energy; Nanoparticles; Nanostructure; Nanotechnology; Optical Devices; Optics; Photonics; Physical Chemistry; Research Paper; Semiconductors; Doped graphene; Modeling and simulation; Graphene; h-BN; CBN
• ISSN: 1388-0764; 1572-896X
• DOI: 10.1007/s11051-012-1059-2

Effect of doping of graphene either by boron (B), nitrogen (N), or co-doped by B and N is studied by density functional theory. Our extensive band structure and density of states calculations indicate that upon doping by N (electron doping), the Dirac point in the graphene band structure shifts below the Fermi level and an energy gap appears at the high symmetric K -point. On the other hand, by B (hole doping), the Dirac point shifts above the Fermi level and a gap appears. Upon co-doping of graphene by B and N, the energy gap between valence and conduction bands appears at Fermi level and the system behaves as narrow gap semiconductor. Obtained results are found to be in well agreement with available experimental findings.