ECR-Plasma Etching of Silicon Nitride Ceramics

• Published in: Nihon Seramikkusu Kyōkai gakujutsu ronbunshi Vol. 101; no. 1170; pp. 217 - 220
• Main Authors: Suda, A, Tajima, I, Ishii, M, Tada, M, Ukyo, Y, Wada, S
• Format: Journal Article
• Language: Japanese
• Published: 01.01.1993
• ISSN: 0914-5400
• DOI: 10.2109/jcersj.101.217

Electron-cyclotron-resonance (ECR) plasma etching was applied to gas pressure sintered Si sub 3 N sub 4 containing Y sub 2 O sub 3 and Al sub 2 O sub 3 , beta '-SiAlON and alpha '/ beta ' composite SiAlON containing Y sub 2 O sub 3 and AlN. The etching was successfully performed within approx 15 min, and the shapes of Si sub 3 N sub 4 and SiAlON grains were clearly observed. Also the grains of alpha 'SiAlON were distinguishable from beta '-SiAlON grains and grain boundaries. The volume ratio of alpha ' phase to beta ' phase obtained from the area of the etched surface was almost consistent with the value obtained from X-ray diffraction. However, the grain boundary area observed from the etched surface did not correspond to that obtained from back scattered electron image.