Compact Modeling Solutions for Oxide-Based Resistive Switching Memories (OxRAM)

Emerging non-volatile memories based on resistive switching mechanisms attract intense R&D efforts from both academia and industry. Oxide-based Resistive Random Acces Memories (OxRAM) gather noteworthy performances, such as fast write/read speed, low power and high endurance outperforming theref...

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Published inJournal of low power electronics and applications Vol. 4; no. 1; pp. 1 - 14
Main Authors Bocquet, Marc, Aziza, Hassen, Zhao, Weisheng, Zhang, Yue, Onkaraiah, Santhosh, Muller, Christophe, Reyboz, Marina, Deleruyelle, Damien, Clermidy, Fabien, Portal, Jean-Michel
Format Journal Article
LanguageEnglish
Published Basel MDPI AG 01.01.2014
MDPI
Subjects
Circuits
compact modeling
design
Devices
Electric power generation
Endurance
Engineering Sciences
Flash memory (computers)
Mathematical models
Micro and nanotechnologies
Microelectronics
OxRAM
RRAM
Simulators
Switching
RRAM
compact modeling
OxRAM
design
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Summary:Emerging non-volatile memories based on resistive switching mechanisms attract intense R&D efforts from both academia and industry. Oxide-based Resistive Random Acces Memories (OxRAM) gather noteworthy performances, such as fast write/read speed, low power and high endurance outperforming therefore conventional Flash memories. To fully explore new design concepts such as distributed memory in logic, OxRAM compact models have to be developed and implemented into electrical simulators to assess performances at a circuit level. In this paper, we present compact models of the bipolar OxRAM memory based on physical phenomenons. This model was implemented in electrical simulators for single device up to circuit level.
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ISSN:2079-9268
2079-9268
DOI:10.3390/jlpea4010001