Multilevel Information Storage in Ferroelectric Polymer Memories

Multibit memory devices based on the ferroelectric copolymer P(VDF‐TrFE) (poly‐(vinylidenefluoride‐trifluoroethylene)) are presented. Multilevel microstructures are fabricated by thermal imprinting of spin‐coated ferroelectric polymer film using a rigid Si template. Multibit storage in capacitors an...

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Published inAdvanced materials (Weinheim) Vol. 23; no. 36; pp. 4146 - 4151
Main Authors Tripathi, Ashutosh K., van Breemen, Albert J. J. M., Shen, Jie, Gao, Qi, Ivan, Marius G., Reimann, Klaus, Meinders, Erwin R., Gelinck, Gerwin H.
Format Journal Article
LanguageEnglish
Published Weinheim WILEY-VCH Verlag 22.09.2011
WILEY‐VCH Verlag
Subjects
Electrical Equipment and Supplies
Electricity
ferroelectric polymers
Hydrocarbons, Fluorinated
imprinting
multibit storage
non-volatile memories
Transistors, Electronic
Vinyl Compounds
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Summary:Multibit memory devices based on the ferroelectric copolymer P(VDF‐TrFE) (poly‐(vinylidenefluoride‐trifluoroethylene)) are presented. Multilevel microstructures are fabricated by thermal imprinting of spin‐coated ferroelectric polymer film using a rigid Si template. Multibit storage in capacitors and thin‐film transistor memory is realized by implementing imprinted ferroelectric polymer films as the insulator and gate dielectric layers, respectively.
Bibliography:ark:/67375/WNG-CK1MZ670-B
istex:F46DA04A7E1C638DA0913BF712723CE062F033E7
ArticleID:ADMA201101511
ObjectType-Article-1
SourceType-Scholarly Journals-1
ObjectType-Feature-2
content type line 23
ISSN:0935-9648
1521-4095
DOI:10.1002/adma.201101511