Electrical Characteristics of the HfAlON Gate Dielectric With Interfacial UV-Ozone Oxide

• Published in: IEEE electron device letters Vol. 29; no. 1; pp. 60 - 62
• Main Authors: CHEN, Yung-Yu, FU, Wen-Yu, YEH, Ching-Fa
• Format: Journal Article
• Language: English
• Published: New York, NY IEEE 01.01.2008; Institute of Electrical and Electronics Engineers; The Institute of Electrical and Electronics Engineers, Inc. (IEEE)
• Subjects: Applied sciences; Character generation; Chemicals; Density; Devices; Dielectric constant; Dielectric properties; Dielectrics; Electric potential; Electric variables; Electron mobility; Electron traps; Electronics; Exact sciences and technology; Gates; HfAlON; high- kappa dielectric; Leakage current; Materials; Oxides; ozone oxide; Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices; Stress; Swing; Transconductance; Transistors; Voltage; MOSFET; High density; Electric stress; ozone oxide; Transistor gate; HfAlON; Drain current; Electron mobility; Leakage current; High k dielectric; Reliability; high-K dielectric; Current density; Comparative study; Nitrides oxides; Transconductance; Electrical characteristic
• ISSN: 0741-3106; 1558-0563
• DOI: 10.1109/LED.2007.911977

In this letter, the electrical properties of a HfAlON dielectric with UV-O 3 interfacial oxide were comprehensively studied and then compared with those of a HfAlON dielectric with interfacial chemical oxide. In the comparison of dielectric characteristics including leakage current density, transconductance, subthreshold swing, saturation drain current, effective electron mobility, and constant voltage stress reliabilities, the results clearly indicate that high-density interfacial UV-O 3 oxide is beneficial in reducing both bulk and interface traps as well as diminishing stress-induced trap generation, and possesses a high potential to be integrated with further high-kappa dielectric applications.