Nuclear radiation detectors based on 4H-SiC p+-n junction

Silicon carbide (SiC) radiation detectors were realized by 10B implantation into the metal contact in order to avoid implantation-related defects within the sensitive area of the 4H-SiC pn junction. No post implantation annealing was performed. Such detectors respond to thermal neutrons showing cons...

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Bibliographic Details
Published in15th International Conference on Silicon Carbide and Related Materials, ICSCRM 2013 p. 1046
Main Authors Issa, F., Vervisch, V., Ottaviani, L., Szalkai, D., Vermeeren, L., Lyoussi, A., Kuznetsov, A., Lazar, M., Klix, A., Palais, O., Hallén, Anders
Format Conference Proceeding
LanguageEnglish
Published 01.01.2014
Subjects
4H-SiC
Implantation
Ion implantation
Leakage current
Leakage currents
Neutron converter layer
Neutron converters
Neutron sources
Neutrons
Nuclear radiation spectroscopy
P-n Diode
Pn diodes
Silicon carbide
Space charge region
Space charge regions
Thermal neutrons
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Summary:Silicon carbide (SiC) radiation detectors were realized by 10B implantation into the metal contact in order to avoid implantation-related defects within the sensitive area of the 4H-SiC pn junction. No post implantation annealing was performed. Such detectors respond to thermal neutrons showing consistent counting rates as function of external reverse bias voltages and radiation intensity.
ISBN:9783038350101
3038350109
DOI:10.4028/www.scientific.net/MSF.778-780.1046