Photoresist Chemical Mechanical Polishing for Shallow Trench Isolation

• Published in: Japanese Journal of Applied Physics Vol. 37; no. 4R; p. 1697
• Main Authors: Itoh, Akio, Imai, Masahiko, Arimoto, Yoshihiro
• Format: Journal Article
• Language: English
• Published: 01.04.1998

We investigated the chemical mechanical polishing (CMP) characteristics of photoresist for the first time. It was found that photoresist polishing rates are strongly dependent on photoresist baking temperature. The photoresist polishing rate exceeded 7000 nm/min, which is 87 times higher than the va...