Photoresist Chemical Mechanical Polishing for Shallow Trench Isolation

We investigated the chemical mechanical polishing (CMP) characteristics of photoresist for the first time. It was found that photoresist polishing rates are strongly dependent on photoresist baking temperature. The photoresist polishing rate exceeded 7000 nm/min, which is 87 times higher than the va...

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Bibliographic Details
Published inJapanese Journal of Applied Physics Vol. 37; no. 4R; p. 1697
Main Authors Itoh, Akio, Imai, Masahiko, Arimoto, Yoshihiro
Format Journal Article
LanguageEnglish
Published 01.04.1998
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Summary:We investigated the chemical mechanical polishing (CMP) characteristics of photoresist for the first time. It was found that photoresist polishing rates are strongly dependent on photoresist baking temperature. The photoresist polishing rate exceeded 7000 nm/min, which is 87 times higher than the value for SiO 2 , after baking at 170°C, but matched that of SiO 2 after baking at 220°C at a polishing pressure of 230 g/cm 2 . The photoresist polishing rate after baking at 240°C was lower than that of SiO 2 . Using these photoresist CMP characteristics, a simple shallow trench isolation (STI) process was achieved.
ISSN:0021-4922
1347-4065
DOI:10.1143/JJAP.37.1697