Change in Electrical Resistance of Diamond Surface Conductive Layer due to Acid Mist

Experimentally obtained results of the change in electrical resistance of the p-type diamond surface conductive layer (PSCL) are simulated using a rate equation. According to a model that simulates the process responsible for the decrease in electrical resistance caused by acid mist containing oxoni...

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Bibliographic Details
Published inJapanese Journal of Applied Physics Vol. 44; no. 2R; p. 842
Main Authors Iida, Masamori, Yasumori, Yoshio, Choe, Il Yong, Kato, Takahiko, Kurosu, Tateki, Kimura, Hideki
Format Journal Article
LanguageEnglish
Published 01.02.2005
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Summary:Experimentally obtained results of the change in electrical resistance of the p-type diamond surface conductive layer (PSCL) are simulated using a rate equation. According to a model that simulates the process responsible for the decrease in electrical resistance caused by acid mist containing oxonium ions (H 3 O + ), H 3 O + ions react with hydrogen atoms terminating dangling bonds on the diamond surface and cause the creation of holes in diamond films. The rate equation describing these hole creation processes is set up and time-dependent electrical resistance is simulated. The simulated results are in agreement with the experimental results.
ISSN:0021-4922
1347-4065
DOI:10.1143/JJAP.44.842