Tunnel DCIV extraction of dopant-impurity concentration, oxide thickness, and length in the channel and extension regions of ultrathin gate-oxide MOS transistors

• Published in: IEEE transactions on electron devices Vol. 52; no. 7; pp. 1548 - 1554
• Main Authors: Jie, B.B., Chih-Tang Sah
• Format: Journal Article
• Language: English
• Published: New York, NY IEEE 01.07.2005; Institute of Electrical and Electronics Engineers; The Institute of Electrical and Electronics Engineers, Inc. (IEEE)
• Subjects: Applied sciences; Channel length; Channels; Devices; Drains; Electronics; Exact sciences and technology; extension length; Manufacturing engineering; MOSFETs; Nanotechnology; oxide thickness; Oxides; Semiconductor devices; Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices; surface dopant-impurity concentration; Transistors; tunnel direct current current-voltage (TDCIV); Tunnel transistors; Tunnels (transportation); ultrathin gate oxide; Ultrathin films; Gate current; Gate voltage; oxide thickness; Impurity density; PMOS technology; Transistor gate; Factory; extension length; ultrathin gate oxide; Direct current; Gate oxide; First order; tunnel direct current current-voltage (TDCIV); MOS transistor; surface dopant-impurity concentration; Channel length
• ISSN: 0018-9383; 1557-9646
• DOI: 10.1109/TED.2005.850623

A methodology is described for extracting, between the source and drain, the spatial variations of surface dopant-impurity concentration and oxide thickness in the channel, drain/extension and source/extension regions using experimental tunnel direct current current-voltage data of the drain, source, and basewell terminal currents versus the gate/base voltage. An example is given using an pMOS transistor with W/L=10 /spl mu/m/0.3 /spl mu/m fabricated by a factory 100-nm technology. Zeroth (constant values) and first-order (linear variation with position) representation formulas are used for the impurity concentration and oxide thickness to fit the experimental data, which also give the electrical lengths of the three regions.