Amorphous/Microcrystalline Silicon Thin Film Transistor Characteristics for Large Size Oled Television Driving
An amorphous silicon thin film transistor (TFT) and a TFT with a microcrystalline/amorphous channel layer are studied for organic light emitting diode (OLED) backplane usage. The amorphous silicon TFT V TH shift can be reduced with saturation region operation. There are two mechanisms that cause the...
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Published in | Japanese Journal of Applied Physics Vol. 43; no. 8R; p. 5122 |
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Main Author | |
Format | Journal Article |
Language | English |
Published |
01.08.2004
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Online Access | Get full text |
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Summary: | An amorphous silicon thin film transistor (TFT) and a TFT with a microcrystalline/amorphous channel layer are studied for organic light emitting diode (OLED) backplane usage. The amorphous silicon TFT
V
TH
shift can be reduced with saturation region operation. There are two mechanisms that cause the
V
TH
shift in a saturation region: One that appears with continuous current flow and the other that appears with the transient charge injection into a gate insulator. SiH
4
flow in hydrogen plasma with a pumping flow period shorter than the gas residence time produces a high-transconductance microcrystalline/amorphous silicon TFT. |
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ISSN: | 0021-4922 1347-4065 |
DOI: | 10.1143/JJAP.43.5122 |