Amorphous/Microcrystalline Silicon Thin Film Transistor Characteristics for Large Size Oled Television Driving

An amorphous silicon thin film transistor (TFT) and a TFT with a microcrystalline/amorphous channel layer are studied for organic light emitting diode (OLED) backplane usage. The amorphous silicon TFT V TH shift can be reduced with saturation region operation. There are two mechanisms that cause the...

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Bibliographic Details
Published inJapanese Journal of Applied Physics Vol. 43; no. 8R; p. 5122
Main Author Tsujimura, Takatoshi
Format Journal Article
LanguageEnglish
Published 01.08.2004
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Summary:An amorphous silicon thin film transistor (TFT) and a TFT with a microcrystalline/amorphous channel layer are studied for organic light emitting diode (OLED) backplane usage. The amorphous silicon TFT V TH shift can be reduced with saturation region operation. There are two mechanisms that cause the V TH shift in a saturation region: One that appears with continuous current flow and the other that appears with the transient charge injection into a gate insulator. SiH 4 flow in hydrogen plasma with a pumping flow period shorter than the gas residence time produces a high-transconductance microcrystalline/amorphous silicon TFT.
ISSN:0021-4922
1347-4065
DOI:10.1143/JJAP.43.5122