Hetero Atomic-Layer Epitaxy of Ge on Si(100)

Hetero atomic-layer epitaxy of Ge on the Si(100) surface has been successfully demonstrated. The Si underlayer was found to have strong influences on the adsorption kinetics of a Ge precursor, but a discrete increase in the grown-film thickness was achieved with a one-monolayer step up to the critic...

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Bibliographic Details
Published inJapanese Journal of Applied Physics Vol. 39; no. 5R; p. 2536
Main Authors Motohiro Matsuyama, Motohiro Matsuyama, Satoshi Sugahara, Satoshi Sugahara, Keiji Ikeda, Keiji Ikeda, Yasutaka Uchida, Yasutaka Uchida, Masakiyo Matsumura, Masakiyo Matsumura
Format Journal Article
LanguageEnglish
Published 01.05.2000
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Summary:Hetero atomic-layer epitaxy of Ge on the Si(100) surface has been successfully demonstrated. The Si underlayer was found to have strong influences on the adsorption kinetics of a Ge precursor, but a discrete increase in the grown-film thickness was achieved with a one-monolayer step up to the critical thickness of the Ge layer. The periodicity of vacancy lines in the grown Ge layer is shortened in pitch with increasing the number of Ge growth cycles, reconfirming that the Ge layer was grown in a layer-by-layer manner. C atoms were not introduced in the grown film when the growth temperature was about 420°C.
ISSN:0021-4922
1347-4065
DOI:10.1143/JJAP.39.2536