Quantitative evaluation of gate oxide damage during plasma processing using antenna-structure capacitors
Plasma-induced damage of gate oxides is evaluated from the difference between the intrinsic charge-to-breakdown ( Q BD ) and the residual Q BD . This difference, Δ Q BD , corresponds to the plasma-induced damage to the oxide and to the accumulation of conduction current from the plasma into the oxid...
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Published in | Japanese Journal of Applied Physics Vol. 33; no. 1A; pp. 83 - 87 |
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Main Authors | , , , , , |
Format | Journal Article |
Language | English |
Published |
Tokyo
Japanese journal of applied physics
1994
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Subjects | |
Online Access | Get full text |
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Summary: | Plasma-induced damage of gate oxides is evaluated from the difference between the intrinsic charge-to-breakdown (
Q
BD
) and the residual
Q
BD
. This difference, Δ
Q
BD
, corresponds to the plasma-induced damage to the oxide and to the accumulation of conduction current from the plasma into the oxide. It is shown experimentally that the plasma-induced damage Δ
Q
BD
increases in proportion to the antenna ratio (exposed antenna area/gate area). The Δ
Q
BD
of the antenna capacitor depends not on the device structures such as the gate oxide thickness, but on the plasma process conditions. |
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ISSN: | 0021-4922 1347-4065 |
DOI: | 10.1143/jjap.33.83 |