A deep submicrometer CMOS process compatible high-Q air-gap solenoid inductor with laterally laid structure

• Published in: IEEE electron device letters Vol. 26; no. 3; pp. 160 - 162
• Main Authors: Lin, C.S., Fang, Y.K., Chen, S.F., Lin, C.Y., Hsieh, M.C., Lai, C.M., Chou, T.H., Chen, C.H.
• Format: Journal Article
• Language: English
• Published: New York, NY IEEE 01.03.2005; Institute of Electrical and Electronics Engineers; The Institute of Electrical and Electronics Engineers, Inc. (IEEE)
• Subjects: Air gaps; Air-gap; Applied sciences; CMOS; CMOS process; CMOS technology; Compatibility; Computer programs; Design. Technologies. Operation analysis. Testing; Devices; Electronics; Exact sciences and technology; falling altitude; Frequency measurement; Inductors; Integrated circuits; Magnetic devices; Parasitic capacitance; quality factor; Radio frequency; Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices; Silicon; Simulation; Software; solenoid; Solenoids; Spirals; falling altitude; High Q factor; Q factor; Submicrometer; Inductor; Air-gap; quality factor; Solenoid; Impact strength; Complementary MOS technology; Air gap; Capacitance; Software; inductors; Comparative study
• ISSN: 0741-3106; 1558-0563
• DOI: 10.1109/LED.2005.843213

A high-quality (Q) on-chip solenoid inductor has been fabricated by 0.18 mm CMOS technology with air-gap structure. The solenoid structure with laterally laid out structure saves the chip area significantly and the air-gap suppresses the parasitic capacitances to obtain high-Q value. Additionally, with software ANSYS simulation, the solenoid inductor also possesses a higher strength for impact (80 000 times) in comparison to a spiral inductor. The measured peak-Q and peak-Q frequency with an air-gap are 8.8 and 1.7 GHz, respectively, which present almost 9% improvements in the magnitude and 54% in the peak-Q frequency in comparison to the conventional solenoid inductor at 8.1 and 1.1 GHz.