Band Diagram of Metal-Insulator-Magnetic Semiconductor (La 0.85 Sr 0.15 MnO 3 ) Structure at Room Temperature
We investigated electrical properties of a La 0.85 Sr 0.15 MnO 3 magnetic semiconductor through observation of photoinduced current and electron-beam-induced current (EBIC) across the Al/(100)SrTiO 3 /(100)La 0.85 Sr 0.15 MnO 3 metal-insulator-semiconductor (MIS) structure at room temperature. The t...
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| Published in | Japanese Journal of Applied Physics Vol. 37; no. 8B; p. L999 |
|---|---|
| Main Authors | , , , |
| Format | Journal Article |
| Language | English |
| Published |
15.08.1998
|
| Online Access | Get full text |
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| Summary: | We investigated electrical properties of a La
0.85
Sr
0.15
MnO
3
magnetic
semiconductor through observation of photoinduced current and electron-beam-induced current (EBIC) across the Al/(100)SrTiO
3
/(100)La
0.85
Sr
0.15
MnO
3
metal-insulator-semiconductor (MIS) structure at room temperature. The test
specimens were prepared by the Ar–F excimer laser ablation technique.
According to the current flowing direction, it was observed that the
La
0.85
Sr
0.15
MnO
3
band bends downward at and near the interface. Furthermore,
from determination of the flat-band condition, the work function of
(100)La
0.85
Sr
0.15
MnO
3
epitaxial film was estimated to be ∼4.8 eV. |
|---|---|
| ISSN: | 0021-4922 1347-4065 |
| DOI: | 10.1143/JJAP.37.L999 |