First Demonstration of Rectifying Property of P-I-N Heterojunctions Fabricated by Tri-Layered Semiconducting Oxides

• Published in: Japanese Journal of Applied Physics Vol. 38; no. 4S; p. 2675
• Main Authors: Sugiura, Masanori, Uragou, Kazuyuki, Tachiki, MakotoNoda, Kobayashi, Takeshi
• Format: Journal Article
• Language: English
• Published: 01.04.1999
• ISSN: 0021-4922; 1347-4065
• DOI: 10.1143/JJAP.38.2675

We have fabricated semiconducting oxide p-i-n diodes in order to explore minority carrier injection effects in oxide materials. The diodes comprised p -La 0.85 Sr 0.15 MnO 3 / i -SrTiO 3 / n -La 0.05 Sr 0.95 TiO 3 . All oxide layers were grown epitaxially by the eclipse pulsed laser deposition method on (100) SrTiO 3 substrates. The diodes showed good rectifying properties, and from the flat-band capacitance measurement, we obtained a diffusion potential of about 0.2 V for these diodes in agreement with the calculated results. In the lower temperature regime, the space-charge-limited-current property was pronounced, arising from residual traps inside the i -SrTiO 3 layer. The backward current was mostly due to tunneling through the i -SrTiO 3 layer, showing no meaningful expansion of depletion regions in both p - and n -oxide layers.