Effect of Floating-Body and Stress Bias on NBTI and HCI on 65-nm SOI pMOSFETs

• Published in: IEEE electron device letters Vol. 29; no. 3; pp. 262 - 264
• Main Authors: Mishra, R., Ioannou, D.E., Mitra, S., Gauthier, R.
• Format: Journal Article
• Language: English
• Published: New York, NY IEEE 01.03.2008; Institute of Electrical and Electronics Engineers; The Institute of Electrical and Electronics Engineers, Inc. (IEEE)
• Subjects: Applied sciences; Bias; Concurrent HCI-NBTI; Degradation; Devices; Drains; Electric potential; Electronics; Exact sciences and technology; Hot carrier injection; hot carrier injection (HCI); Human computer interaction; MOSFETs; Negative bias temperature instability; negative bias temperature instability (NBTI); Niobium base alloys; Niobium compounds; Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices; Silicon on insulator technology; silicon-on-insulator (SOI); Stress; Stresses; Titanium compounds; Transistors; Voltage; Concurrent HCI-NBTI; hot carrier injection (HCI); silicon-on-insulator (SOI); negative bias temperature instability (NBTI); Thermal stress; Negative bias temperature instability; MOSFET; Gate voltage; Electric stress; PMOS technology; Silicon on insulator technology; Hot carrier; silicon-on- insulator (SOI); Drain voltage; Reliability; Floating body; Room temperature; Damaging; Charge carrier injection
• ISSN: 0741-3106; 1558-0563
• DOI: 10.1109/LED.2007.915382

Grounded-body (GB) core-logic/high-speed (HS) and input/output (I/O) silicon-on-insulator pMOSFETs from 65-nm technology are shown to degrade more than floating-body (FB) devices under negative bias temperature instability (NBTI) stress. However, in both cases, worst case degradation occurs when stressed under equal gate and drain voltages (V g = V d ), whereby degradation is simultaneously induced by both NBTI and hot carrier injection (HCI) simultaneously ("concurrent HCI-NBTI"), the relative importance of each mechanism depending on the type of device and the bias level. The degradation of I/O pMOSFETs stressed under V g = V d at room temperature shows predominantly NBTI-like behavior at higher stress voltages, whereas it shows concurrent HCI-NBTI behavior at lower stress voltages. By contrast, the degradation of HS pMOSFETs stressed under V g = V d shows concurrent HCI-NBTI behavior over the entire stress bias range. In both cases, FB devices degrade more than GB devices for higher stress voltage values, but the FB effects weaken and the degradations become comparable for lower stress bias.