Static and High-Frequency Behavior and Performance of Schottky-Barrier p-MOSFET Devices

• Published in: IEEE transactions on electron devices Vol. 54; no. 10; pp. 2796 - 2802
• Main Authors: Pearman, D.J., Pailloncy, G., Raskin, J.-P., Larson, J.M., Snyder, J.P., Parker, E.H.C., Whall, T.E.
• Format: Journal Article
• Language: English
• Published: New York, NY IEEE 01.10.2007; Institute of Electrical and Electronics Engineers; The Institute of Electrical and Electronics Engineers, Inc. (IEEE)
• Subjects: Annealing; Applied sciences; Channels; ColdFET; Current measurement; Devices; Drains; Electronics; electrostatic measurement; Exact sciences and technology; Intermetallics; Logic gates; Microwave measurements; MOSFETs; Performance evaluation; scattering parameter measurement; Schottky barriers; Schottky-barrier metal/source MOSFET; semiconductor devices; Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices; Semiconductors; Silicides; Temperature measurement; Transistors; Performance evaluation; MOSFET; Schottky barriers; semiconductor devices; MOSFETs; Cut off frequency; Microwave measurement; s parameter; Wafer; Transconductance; High performance; Annealing; PMOS technology; Doped materials; electrostatic measurement; Radiofrequency; scattering parameter measurement; microwave measurements; p channel; Semiconductor device; Schottky-barrier metal/source MOSFET; Capacitance; ColdFET; High frequency; Metal semiconductor field effect transistor; Gain; Schottky barrier
• ISSN: 0018-9383; 1557-9646
• DOI: 10.1109/TED.2007.904985

The dc and radio-frequency performance of 85-nm gate-length p-channel PtSi source/drain Schottky-barrier MOSFETs on two wafers with differing source/drain silicide anneal temperatures has been investigated. ON currents of 545 mA/ mm and transconductances of 640 mS/mm are presented for bias conditions based on recommendations by the International Technology Roadmap for Semiconductors. Devices receiving silicide anneals at lower temperatures exhibit higher drive currents and transconductances, which is attributed to a lower Schottky barrier between source and channel. Unity-gain cutoff frequencies of up to 71 GHz are measured, which is considerably higher than comparable doped source/drain pMOS devices reported in literature. Improved high-frequency performance is attributed to high transconductance and low capacitance.