Wrapped Alignment Marks for Fabrication of Interference/Diffraction Hot Electron Devices

A wrapped alignment mark structure is proposed for a nano-fabrication process by e-beam lithography (EBL) with organometallic vapor phase epitaxy regrowth. To protect the alignment marks during regrowth, a SiO 2 layer covers the surface of the gold mark and a thin tungsten layer is inserted between...

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Bibliographic Details
Published inJapanese Journal of Applied Physics Vol. 37; no. 3S; p. 1518
Main Authors Hiroo Hongo, Hiroo Hongo, Yasuyuki Miyamoto, Yasuyuki Miyamoto, Jun Suzuki, Jun Suzuki, Michihiko Suhara, Michihiko Suhara, Kazuhito Furuya, Kazuhito Furuya
Format Journal Article
LanguageEnglish
Published 01.03.1998
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Summary:A wrapped alignment mark structure is proposed for a nano-fabrication process by e-beam lithography (EBL) with organometallic vapor phase epitaxy regrowth. To protect the alignment marks during regrowth, a SiO 2 layer covers the surface of the gold mark and a thin tungsten layer is inserted between the mark and the substrate. The waveform serving as a mark detection signal is not significantly reduced after regrowth. By employing this mark system in EBL, an aligned nanostructure with a buried double-slit heterostructure and fine multi-electrodes is fabricated successfully to show the feasibility of this alignment mark method of wrapping. The center to center spacings of the double-slit and the fine electrodes are 40 nm and 50 nm, respectively.
ISSN:0021-4922
1347-4065
DOI:10.1143/JJAP.37.1518