Design Concepts of Single-Layer Resists for Vacuum Ultraviolet Lithography
We investigated the possible use of single-layer resists in vacuum ultraviolet (VUV) lithography. The transmittances in the VUV region of commonly used polymers for photoresists were almost the same. These values were about 20% at 157 nm per 1000 Å-thickness at most. The transmittance at 157 nm of a...
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Published in | Japanese Journal of Applied Physics Vol. 38; no. 12S; p. 7103 |
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Main Authors | , , , , |
Format | Journal Article |
Language | English |
Published |
01.12.1999
|
Online Access | Get full text |
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Summary: | We investigated the possible use of single-layer resists in vacuum ultraviolet (VUV) lithography. The transmittances in the VUV region of commonly used polymers for photoresists were almost the
same. These values were about 20% at 157 nm per 1000 Å-thickness at most. The transmittance
at 157 nm of a poly (
p
-hydroxystyrene) (PHS)-type polymer was slightly increased by halogenation of
the aromatic group. Negative working behavior was observed for PHS-type resists. It is thought that
both crosslinking and deprotection occurred in PHS-type polymers. A methacrylate-type resist
showed high contrast due to the photodecomposition of the base polymer and photo-deprotection in
addition to acidic deprotection. It was estimated that the resolution capability of this resist was 80 nm
lines and spaces (L/S) (λ157 nm, NA 0.65) using a PROLITH/3D lithography simulator with
experimental dissolution data. |
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ISSN: | 0021-4922 1347-4065 |
DOI: | 10.1143/JJAP.38.7103 |