Improved semiconductor-laser dynamics from induced population pulsation

• Published in: IEEE journal of quantum electronics Vol. 42; no. 6; pp. 552 - 562
• Main Authors: Wieczorek, S., Chow, W.W., Chrostowski, L., Chang-Hasnain, C.J.
• Format: Journal Article
• Language: English
• Published: New York, NY IEEE 01.06.2006; Institute of Electrical and Electronics Engineers; The Institute of Electrical and Electronics Engineers, Inc. (IEEE)
• Subjects: Bandwidth; Bifurcation; Distributed feedback devices; Dynamics; Exact sciences and technology; Frequency; Fundamental areas of phenomenology (including applications); Holes; Injection locking; Laser feedback; Laser mode locking; Laser optical systems: design and operation; Laser theory; Lasers; Low frequencies; modulation bandwidth; modulation response; Optics; Physics; population pulsation; Pulsation; Quantum electronics; relaxation oscillation; Relaxation oscillations; Relaxation oscillations and long pulse operation; Semiconductor lasers; Semiconductor lasers; laser diodes; Surface emitting lasers; Vertical cavity surface emitting lasers; Vertical cavity laser; modulation response; modulation bandwidth; Semiconductor lasers; Surface emitting lasers; Rate equation; Relaxation oscillation; population pulsation; Injection locking; Experimental study; Intracavity; Dynamical systems
• ISSN: 0018-9197; 1558-1713
• DOI: 10.1109/JQE.2006.874753

This paper investigates theoretically the modification of dynamical properties in a semiconductor laser by a strong injected signal. It is found that enhanced relaxation oscillations are governed by the pulsations of the intracavity field and population at frequencies determined by the injected field and cavity resonances. Furthermore, the bandwidth enhancement is associated with the undamping of the injection-induced relaxation oscillation and strong population pulsation effects. There are two limitations to the modulation-bandwidth enhancement: Overdamping of relaxation oscillation and degradation of flat response at low frequencies. The injected-laser rate-equations used in the investigation reproduce the relevant aspects of modulation-bandwidth enhancement found in the experiment on injection-locked vertical-cavity surface-emitting lasers.