Electrical properties and memory effect in the field effect transistor based on organic ferroelectric insulator and pentacene

• Published in: Open Physics Vol. 2; no. 2; pp. 357 - 366
• Main Authors: Matsuo, Yasumitsu, Ijichi, Takehiko, Yamada, Hironori, Hatori, Junko, Ikehata, Seiichiro
• Format: Journal Article
• Language: English
• Published: Versita 01.06.2004; De Gruyter
• Subjects: 72.80.Le; 73.40.Qv; 73.61.Ph; 77.84.Fa; ferroelectric memory effect; molecular conductor; organic thin-film field effect transistor
• ISSN: 2391-5471; 2391-5471
• DOI: 10.2478/BF02475636

We have fabricated a field effect transistor (FET) based on an organic ferroelectric insulator and molecular conductor, and investigated the electrical properties and memory effects on the PEN-FET. We have observed a drastic change in the drain current at around the coercive electric fieldE c of the organic ferroelectric insulator in not only a FET (PEN-FET) based on a pentacene (PEN) film but also a FET (IPEN-FET) based on an iodine doped PEN film. The magnitude of the change of the drain current for the IPEN-FET is 200 times larger than that for the PEN-FET. It is expected from these results that the PEN-FET (especially the IPEN-FET) is an improvement in such devices, since it operates at a low gate electric field accompanied by the appearance of the spontaneous polarization in the organic ferroelectric insulator. In addition, we have found that the drain current for the PEN-FET does not return to the initial drain current ofE G=0 V/cm for more than one week, even if the gate electric field is changed to 0 V/cm from 500 V/cm(>E c). From these results, it is suggested that the PEN-FET becomes a memory device.