Preparation of Position-Controlled Crystal-Silicon Island Arrays by Means of Excimer-Laser Annealing
Two-dimensionally aligned and ultralarge Si grains were grown on a glassy substrate by phase-modulated excimer-laser annealing, for the first time. Grains as large as 7 µm were grown at predetermined positions at 500°C, and were expected to be aligned with less than 30 µm pitch. Serious effects of t...
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Published in | Japanese Journal of Applied Physics Vol. 37; no. 10R; p. 5474 |
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Main Authors | , |
Format | Journal Article |
Language | English |
Published |
01.10.1998
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Online Access | Get full text |
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