Preparation of Position-Controlled Crystal-Silicon Island Arrays by Means of Excimer-Laser Annealing

Two-dimensionally aligned and ultralarge Si grains were grown on a glassy substrate by phase-modulated excimer-laser annealing, for the first time. Grains as large as 7 µm were grown at predetermined positions at 500°C, and were expected to be aligned with less than 30 µm pitch. Serious effects of t...

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Bibliographic Details
Published inJapanese Journal of Applied Physics Vol. 37; no. 10R; p. 5474
Main Authors Chang-Ho Oh, Chang-Ho Oh, Masakiyo Matsumura, Masakiyo Matsumura
Format Journal Article
LanguageEnglish
Published 01.10.1998
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Summary:Two-dimensionally aligned and ultralarge Si grains were grown on a glassy substrate by phase-modulated excimer-laser annealing, for the first time. Grains as large as 7 µm were grown at predetermined positions at 500°C, and were expected to be aligned with less than 30 µm pitch. Serious effects of the laser beam divergence, which is influenced by the optical system, are pointed out.
ISSN:0021-4922
1347-4065
DOI:10.1143/JJAP.37.5474