Thermodynamic Modeling of the Ti-Al-N System and Application to the Simulation of CVD Processes of the (Ti,Al)N Metastable Phase

Owing to its numerous technological applications in the fields of integrated circuits and protective coatings, the TiAlN system has aroused increasing interest. The purpose of this paper is to propose a thermodynamic model and simulate its processing conditions. The calculation and optimization of...

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Bibliographic Details
Published inChemical vapor deposition Vol. 5; no. 3; pp. 109 - 115
Main Authors Anderbouhr, Stéphanie, Gilles, Sandra, Blanquet, Elisabeth, Bernard, Claude, Madar, Roland
Format Journal Article
LanguageEnglish
Published Weinheim WILEY-VCH Verlag GmbH 01.06.1999
WILEY‐VCH Verlag GmbH
Wiley-VCH
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Summary:Owing to its numerous technological applications in the fields of integrated circuits and protective coatings, the TiAlN system has aroused increasing interest. The purpose of this paper is to propose a thermodynamic model and simulate its processing conditions. The calculation and optimization of the TiAlN ternary phase diagram was performed as the first step to modeling two competitive CVD processes used for the processing of titanium aluminum nitride coatings: low pressure chemical vapor deposition (LPCVD) and metal‐organic chemical vapor deposition (MOCVD). Thermodynamic simulations of the processes have been used to investigate the effect of varying operating parameters and to predict the nature of the phases present at equilibrium. Calculations were then made on the TiAlNClHAr and TiAlNCHAr chemical systems, corresponding to the two CVD processes. The TiAlN system has numerous applications for integrated circuits and protective coatings. However, the composition of the ternary system needs to be controlled in order to optimize layer characteristics for the different applications. Here thermodynamic calculations and simulations based on TiAlN phase diagrams (see Figure) are performed for LPCVD and MOCVD processes.
Bibliography:ArticleID:CVDE109
ark:/67375/WNG-JWF3BWWT-2
istex:8D9CA9AA63C1F97DD6F0D4C48FB32BC4F74DFBF5
ISSN:0948-1907
1521-3862
DOI:10.1002/(SICI)1521-3862(199906)5:3<109::AID-CVDE109>3.0.CO;2-0