Thermodynamic Modeling of the Ti-Al-N System and Application to the Simulation of CVD Processes of the (Ti,Al)N Metastable Phase
Owing to its numerous technological applications in the fields of integrated circuits and protective coatings, the TiAlN system has aroused increasing interest. The purpose of this paper is to propose a thermodynamic model and simulate its processing conditions. The calculation and optimization of...
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Published in | Chemical vapor deposition Vol. 5; no. 3; pp. 109 - 115 |
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Main Authors | , , , , |
Format | Journal Article |
Language | English |
Published |
Weinheim
WILEY-VCH Verlag GmbH
01.06.1999
WILEY‐VCH Verlag GmbH Wiley-VCH |
Subjects | |
Online Access | Get full text |
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Summary: | Owing to its numerous technological applications in the fields of integrated circuits and protective coatings, the TiAlN system has aroused increasing interest. The purpose of this paper is to propose a thermodynamic model and simulate its processing conditions. The calculation and optimization of the TiAlN ternary phase diagram was performed as the first step to modeling two competitive CVD processes used for the processing of titanium aluminum nitride coatings: low pressure chemical vapor deposition (LPCVD) and metal‐organic chemical vapor deposition (MOCVD). Thermodynamic simulations of the processes have been used to investigate the effect of varying operating parameters and to predict the nature of the phases present at equilibrium. Calculations were then made on the TiAlNClHAr and TiAlNCHAr chemical systems, corresponding to the two CVD processes.
The TiAlN system has numerous applications for integrated circuits and protective coatings. However, the composition of the ternary system needs to be controlled in order to optimize layer characteristics for the different applications. Here thermodynamic calculations and simulations based on TiAlN phase diagrams (see Figure) are performed for LPCVD and MOCVD processes. |
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Bibliography: | ArticleID:CVDE109 ark:/67375/WNG-JWF3BWWT-2 istex:8D9CA9AA63C1F97DD6F0D4C48FB32BC4F74DFBF5 |
ISSN: | 0948-1907 1521-3862 |
DOI: | 10.1002/(SICI)1521-3862(199906)5:3<109::AID-CVDE109>3.0.CO;2-0 |