Investigations of the gate instability characteristics in Schottky/ohmic type p-GaN gate normally-off AlGaN/GaN HEMTs
In this work, the impacts of Schottky- and ohmic-type gate contacts on devices stability of p-GaN gate AlGaN/GaN high electron mobility transistors were experimentally investigated. In the Schottky-gate devices, drastic gate instability were observed under positive gate bias and elevated temperature...
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Published in | Applied physics express Vol. 12; no. 12; pp. 121005 - 121008 |
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Main Authors | , , , , , , , , , , , , , |
Format | Journal Article |
Language | English |
Published |
IOP Publishing
01.12.2019
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Online Access | Get full text |
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Summary: | In this work, the impacts of Schottky- and ohmic-type gate contacts on devices stability of p-GaN gate AlGaN/GaN high electron mobility transistors were experimentally investigated. In the Schottky-gate devices, drastic gate instability were observed under positive gate bias and elevated temperatures, featuring evident negative threshold voltage shift especially at low gate voltage region. By contrast, ohmic-gate devices exhibit superior gate stability with near-zero threshold voltage shift. Correspondingly, a physics picture of hole injection/emission processes in the p-GaN layer was established for the understanding of the distinct gate stability behaviors with different gate contact types. |
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Bibliography: | APEX-102980.R1 |
ISSN: | 1882-0778 1882-0786 |
DOI: | 10.7567/1882-0786/ab52cc |