Investigations of the gate instability characteristics in Schottky/ohmic type p-GaN gate normally-off AlGaN/GaN HEMTs

In this work, the impacts of Schottky- and ohmic-type gate contacts on devices stability of p-GaN gate AlGaN/GaN high electron mobility transistors were experimentally investigated. In the Schottky-gate devices, drastic gate instability were observed under positive gate bias and elevated temperature...

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Published inApplied physics express Vol. 12; no. 12; pp. 121005 - 121008
Main Authors Zeng, Changkun, Xu, Weizong, Xia, Yuanyang, Pan, Danfeng, Wang, Yiwang, Wang, Qiang, Zhu, Youhua, Ren, Fangfang, Zhou, Dong, Ye, Jiandong, Chen, Dunjun, Zhang, Rong, Zheng, Youdou, Lu, Hai
Format Journal Article
LanguageEnglish
Published IOP Publishing 01.12.2019
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Summary:In this work, the impacts of Schottky- and ohmic-type gate contacts on devices stability of p-GaN gate AlGaN/GaN high electron mobility transistors were experimentally investigated. In the Schottky-gate devices, drastic gate instability were observed under positive gate bias and elevated temperatures, featuring evident negative threshold voltage shift especially at low gate voltage region. By contrast, ohmic-gate devices exhibit superior gate stability with near-zero threshold voltage shift. Correspondingly, a physics picture of hole injection/emission processes in the p-GaN layer was established for the understanding of the distinct gate stability behaviors with different gate contact types.
Bibliography:APEX-102980.R1
ISSN:1882-0778
1882-0786
DOI:10.7567/1882-0786/ab52cc