The growth and characterization of GaN films on cone-shaped patterned sapphire by MOCVD

• Published in: Journal of semiconductors Vol. 34; no. 11; pp. 20 - 24
• Main Author: 井亮 肖红领 王晓亮 王翠梅 邓庆文 李志东 丁杰钦 王占国 侯洵
• Format: Journal Article
• Language: English
• Published: 01.11.2013
• Subjects: Chemical vapor deposition; Density; Diffraction; Gallium nitrides; GaN薄膜; MOCVD生长; Reduction; Sapphire; Semiconductors; X-ray diffraction; X-射线衍射; 图案化; 蓝宝石衬底; 表征; 金属有机物化学气相沉积; 锥形

GaN films are grown on cone-shaped patterned sapphire substrates （CPSSs） by metal-organic chemical vapor deposition, and the influence of the temperature during the middle stage of GaN growth on the threading dislocation （TD） density of GaN is investigated. High-resolution X-ray diffraction （XRD） an...