The growth and characterization of GaN films on cone-shaped patterned sapphire by MOCVD

GaN films are grown on cone-shaped patterned sapphire substrates （CPSSs） by metal-organic chemical vapor deposition, and the influence of the temperature during the middle stage of GaN growth on the threading dislocation （TD） density of GaN is investigated. High-resolution X-ray diffraction （XRD） an...

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Published inJournal of semiconductors Vol. 34; no. 11; pp. 20 - 24
Main Author 井亮 肖红领 王晓亮 王翠梅 邓庆文 李志东 丁杰钦 王占国 侯洵
Format Journal Article
LanguageEnglish
Published 01.11.2013
Subjects
Chemical vapor deposition
Density
Diffraction
Gallium nitrides
GaN薄膜
MOCVD生长
Reduction
Sapphire
Semiconductors
X-ray diffraction
X-射线衍射
图案化
蓝宝石衬底
表征
金属有机物化学气相沉积
锥形
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Summary:GaN films are grown on cone-shaped patterned sapphire substrates （CPSSs） by metal-organic chemical vapor deposition, and the influence of the temperature during the middle stage of GaN growth on the threading dislocation （TD） density of GaN is investigated. High-resolution X-ray diffraction （XRD） and cathodeluminescence （CL） were used to characterize the GaN films. The XRD results showed that the edge-type dislocation density of GaN grown on CPSS is remarkably reduced compared to that of GaN grown on conventional sapphire substrates （CSSs）. Furthermore, when the growth temperature in the middle stage of GaN grown on CPSS decreases, the full width at half maximum of the asymmetry （102） plane of GaN is reduced. This reduction is attributed to the enhancement of vertical growth in the middle stage with a more triangular-like shape and the bending of TDs. The CL intensity spatial mapping results also showed the superior optical properties of GaN grown on CPSS to those of GaN on CSS, and that the density of dark spots of GaN grown on CPSS induced by nonradiative recombination is reduced when the growth temperature in the middle stage decreases.
Bibliography:GaN; threading dislocation; patterned sapphire substrate; metal-organic chemical vapor deposition
GaN films are grown on cone-shaped patterned sapphire substrates （CPSSs） by metal-organic chemical vapor deposition, and the influence of the temperature during the middle stage of GaN growth on the threading dislocation （TD） density of GaN is investigated. High-resolution X-ray diffraction （XRD） and cathodeluminescence （CL） were used to characterize the GaN films. The XRD results showed that the edge-type dislocation density of GaN grown on CPSS is remarkably reduced compared to that of GaN grown on conventional sapphire substrates （CSSs）. Furthermore, when the growth temperature in the middle stage of GaN grown on CPSS decreases, the full width at half maximum of the asymmetry （102） plane of GaN is reduced. This reduction is attributed to the enhancement of vertical growth in the middle stage with a more triangular-like shape and the bending of TDs. The CL intensity spatial mapping results also showed the superior optical properties of GaN grown on CPSS to those of GaN on CSS, and that the density of dark spots of GaN grown on CPSS induced by nonradiative recombination is reduced when the growth temperature in the middle stage decreases.
11-5781/TN
Jing Liang, Xiao Hongling, Wang Xiaoliang, Wang Cuimei, Deng Qingwen, Li Zhidong, Ding Jieqin, Wang Zhanguo, and Hou Xun（ 1 Key Laboratory of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences Beijing 100083, China 2Beijing Key Laboratory of Low Dimensional Semiconductor Materials and Devices, Beijing 100083, China 3 ISCAS-XJTU Joint Laboratory of Functional Materials and Devices for lnformatics, Beijing 100083, China 4Xi＇an Jiaotong University, Xi＇an 710049, China）
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SourceType-Scholarly Journals-1
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content type line 23
ISSN:1674-4926
DOI:10.1088/1674-4926/34/11/113002