Growth of SiGe film by using a single-wafer rapid thermal processing UHV/CVD system

Interest in SiGe alloys arises from the technological promise of combining bandgap engineering with presently well-established Si technology. The SiGe heterojunction bipolar transistor boasts excellent performance including high cut-off frequency and maximum oscillation frequency, low noise, large c...

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Bibliographic Details
Published inMetals and materials international Vol. 10; no. 5; pp. 435 - 438
Main Authors Huang, Wentao, Chen, Changchun, Li, Xiyou, Xiong, Xiaoyi, Liu, Zhihong, Zhang, Wei, Xu, Jun, Tsien, Pei-hsin
Format Journal Article
LanguageEnglish
Published Seoul Springer Nature B.V 01.10.2004
Subjects
Bipolar transistors
Chemical vapor deposition
Devices
Displays
Gain
Heterojunction bipolar transistors
Semiconductor devices
Semiconductors
Silicon germanides
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Summary:Interest in SiGe alloys arises from the technological promise of combining bandgap engineering with presently well-established Si technology. The SiGe heterojunction bipolar transistor boasts excellent performance including high cut-off frequency and maximum oscillation frequency, low noise, large current gain, and better low-temperature characteristics. Ultra-high-vacuum chemical vapor deposition (UHV/CVD) system displays excellent performance for the growth of high-quality SiGe film. Investigations have shown that have shown that SiGe film grown by this system has high quality. A 10-finger SiGe hetero-junction bipolar transistor (HBT) device displayed good electrical performance. The current gain was about 500, and the fT was 5.4 GHz with fmax 7.5 GHz under VCE=3 V, IC=10 mA.
Bibliography:ObjectType-Article-2
SourceType-Scholarly Journals-1
ObjectType-Feature-1
content type line 23
ISSN:1598-9623
2005-4149
DOI:10.1007/BF03027345