Broadband Terahertz Power Detectors Based on 90-nm Silicon CMOS Transistors With Flat Responsivity Up to 2.2 THz
We present broadband high sensitivity terahertz (THz) detectors based on 90 nm CMOS technology with the state-of-the-art performance. The devices are based on bow-tie and log-spiral antenna-coupled field-effect transistors (FETs) for the detection of free-space THz radiation (TeraFETs). We report on...
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Published in | IEEE electron device letters Vol. 39; no. 9; pp. 1413 - 1416 |
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Main Authors | , , , , , |
Format | Journal Article |
Language | English |
Published |
New York
IEEE
01.09.2018
The Institute of Electrical and Electronics Engineers, Inc. (IEEE) |
Subjects | |
Online Access | Get full text |
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Summary: | We present broadband high sensitivity terahertz (THz) detectors based on 90 nm CMOS technology with the state-of-the-art performance. The devices are based on bow-tie and log-spiral antenna-coupled field-effect transistors (FETs) for the detection of free-space THz radiation (TeraFETs). We report on optimized performance, which was achieved by employing an in-house developed physics-based model during detector design and thorough device characterization under THz illumination. The implemented detector with bow-tie antenna design exhibits a nearly flat frequency response characteristic up to 2.2 THz with an optical responsivity of 45 mA/W (or 220 V/W). We have determined a minimum optical noise-equivalent power as low as 48 pW/<inline-formula> <tex-math notation="LaTeX">\sqrt {\textsf {Hz}} </tex-math> </inline-formula> at 0.6 THz and 70 pW/<inline-formula> <tex-math notation="LaTeX">\sqrt {\textsf {Hz}} </tex-math> </inline-formula> at 1.5 THz. The results obtained at 1.5 THz are better than the best narrowband TeraFETs reported in the literature at this frequency and only up to a factor of four inferior to the best narrowband devices at 0.6 THz. |
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ISSN: | 0741-3106 1558-0563 |
DOI: | 10.1109/LED.2018.2859300 |