Investigation of Ge based chalcogenide glasses doped with Er, Pr and Ho

• Published in: Journal of non-crystalline solids Vol. 356; no. 44; pp. 2355 - 2359
• Main Authors: Zavadil, J., Kostka, P., Pedlikova, J., Ivanova, Z.G., Zdansky, K.
• Format: Journal Article Conference Proceeding
• Language: English
• Published: Oxford Elsevier B.V 01.10.2010; Elsevier
• Subjects: Chalcogenide glasses C145; Chalcogenides; Condensed matter: electronic structure, electrical, magnetic, and optical properties; Cross-disciplinary physics: materials science; rheology; Doping; Erbium; Exact sciences and technology; Excitation; Germanium; Glass; Glasses (including metallic glasses); Luminescence; Luminescence L220; Materials science; Optical constants: refractive index, complex dielectric constant, absorption, reflection and transmission coefficients, emissivity; Optical properties and condensed-matter spectroscopy and other interactions of matter with particles and radiation; Optical properties of bulk materials and thin films; Optical spectroscopy O117; Photoluminescence; Physics; Rare earth ions R120; Specific materials; Tellurides; Wavelengths; Luminescence L220; Optical spectroscopy O117; Chalcogenide glasses C145; Rare earth ions R120; Radiative transition; Electronic properties; Metastable states; Doping; Luminescence; Photoluminescence; Glass; Electron transfer; Energy gap; Optical transmission; Optical properties; Absorption spectra; Erbium additions; Defect formation; Optical spectrum
• ISSN: 0022-3093; 1873-4812
• DOI: 10.1016/j.jnoncrysol.2010.02.015

Bulk chalcogenide glasses, Ge based sulphides Ge 25Ga 10S 65 and (GeS 2) 80(Ga 2S 3) 20, and tellurides Ge 20Se 80 − xTe x, x ∈ < 0,15>, and those doped with Er, Pr and Ho ions have been prepared by direct synthesis and investigated by optical transmission and low temperature photoluminescence spectroscopy. It has been demonstrated by using (GeS 2) 80(Ga 2S 3) 20 glasses and by monitoring the intensity decrease of the broad band host glass luminescence that increasing Er doping leads to the partial removal of native defects generated by network disorder. Luminescence properties of Ge 25Ga 10S 65:(Er, Pr, Ho) systems have further been studied by varying the excitation wavelengths. The base glass luminescence band has been found shifted from 1200 to 1050 nm when excitation wavelength is decreased from 632.8 to, or below 500 nm. The decreased excitation wavelength enables electron transfer over the band gap in Ge–Ga–S system and into higher metastable states of RE 3+ ions. This is manifested by the shift of the base glass luminescence band to higher energy and by observation of new radiative 4f–4f transitions. The efficiency of 4f–4f transitions in Ge–Se–Te:RE glasses is steadily decreasing with increasing Te content. A pronounced re-absorption of the host glass luminescence is observed in telluride glasses doped with Pr and Er.