Molybdenum gate technology for ultrathin-body MOSFETs and FinFETs

• Published in: IEEE transactions on electron devices Vol. 51; no. 12; pp. 1989 - 1996
• Main Authors: Daewon Ha, Takeuchi, H., Yang-Kyu Choi, Tsu-Jae King
• Format: Journal Article
• Language: English
• Published: New York, NY IEEE 01.12.2004; Institute of Electrical and Electronics Engineers; The Institute of Electrical and Electronics Engineers, Inc. (IEEE)
• Subjects: Applied sciences; Complementary metal-oxide-semiconductor (CMOS); Design. Technologies. Operation analysis. Testing; dry etching; Electronics; Etching; Exact sciences and technology; FinFET; fully depleted silicon-on-insulator (FD SOI); Integrated circuits; Microelectronic fabrication (materials and surfaces technology); Molybdenum materials/devices; molybdenum metal gate; MOSFETs; Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices; Silicon on insulator technology; sputter; Sputtering; Transistors; ultrathin body; Ultrathin films; MOSFET; ultrathin body; Dry process; Depletion layer; FinFET; Etching rate; Dual gate transistor; dry etching; Self aligned technology; Silicon on insulator technology; Microelectronic fabrication; Selective growth; Complementary metal-oxide-semiconductor (CMOS); Gas flow; Complementary MOS technology; fully depleted silicon-on-insulator (FD SOI); molybdenum metal gate; sputter; Selective etching; Sputter deposition; Electrical characteristic; Damaging
• ISSN: 0018-9383; 1557-9646
• DOI: 10.1109/TED.2004.839752

Damage-free sputter deposition and highly selective dry-etch processes have been developed for molybdenum (Mo) metal gate technology, for application to fully depleted silicon-on-insulator ( devices such as the ultrathin body (UTB) MOSFET and double-gate FinFET. A plasma charge trap effectively eliminates high-energy particle bombardment during Mo sputtering; hence the gate-dielectric integrity (TDDB, Q/sub BD/) is significantly improved and the field-effect mobility in Mo-gated MOSFETs follows the universal mobility curve. The effects of etch process parameters such as chlorine (Cl/sub 2/) and oxygen (O/sub 2/) gas flow rate, and source and bias radio frequence powers, were investigated in order to optimize the Mo etch rate and selectivity to SiO/sub 2/. A highly selective etch process was successfully applied to pattern Mo gate electrodes for UTB MOSFETs and FinFETs without leaving any residue or stringers. Measured electrical characteristics and physical analysis results are discussed.